Title :
New MOVPE process for InP based HBT´s using CBr4, TBA and TBP in N2 ambient
Author :
Keiper, D. ; Eriksson, U. ; Westphalen, R. ; Landgren, G.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
Carbon doped InGaAs/InP was grown utilising TBA, CBr4 in N2. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH4. Maximum carbon doping levels of 1020 cm-3 were achieved, comparable to MBE techniques. HBTs with 6.5×1018 cm3 doped base layers, grown at 550°C, show current amplifications of 130
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 550 degC; C doped InGaAs/InP; CBr4; InP; InP based HBT; MOVPE process; N2 ambient; TBA; TBP; current amplifications; n-doping uniformity; Diodes; Doping; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773755
