Title :
STM/STS study on high lateral density, well-aligned In-Ga-P quantum dots self-formed in GaP/InP short-period superlattices grown on GaAs(N11)A substrate
Author :
Asahi, H. ; Noh, J.H. ; Fudeta, M. ; Watanabe, D. ; Mori, J. ; Gonda, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
High lateral density and well-aligned In-Ga-P quantum dots on GaAs(N11)A substrate were observed by STM/STS. The superlattice cycle and gas source MBE growth temperature dependence of the self-formed structures were studied by STM. The self-formation process and mechanism were discussed based on these results. The optimum growth temperature exists at around 460°C under the present growth conditions
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; scanning tunnelling microscopy; scanning tunnelling spectroscopy; self-assembly; semiconductor growth; semiconductor quantum dots; semiconductor superlattices; 460 degC; GaAs; GaAs(N11)A substrate; GaP-InP; GaP/InP; In-Ga-P; STM/STS study; gas source MBE; growth conditions; growth temperature dependence; high lateral density well-aligned quantum dots; self-formation process; short-period superlattices; superlattice cycle; Gallium arsenide; Indium phosphide; Laser sintering; Periodic structures; Photonic band gap; Quantum dots; Sociotechnical systems; Temperature; US Department of Transportation; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773760
