A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 μm

Author

Nawaz, M. ; Persson, S.H.M. ; Zirath, H. ; Choumas, E. ; Mellberg, A.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1999

fDate

1999

Firstpage

14

Abstract

A novel, fast and reliable process for making T-shaped gates has been developed. It uses two PMMA layers and one PMGI resist layer which have completely selective developers that result in a large process window. Using this process scheme, gate lengths from 60 to 200 nm have easily been made in the same process step. The processed InP-HEMTs show excellent dc and rf-performance. The process has a good control of the gate lengths and give a high yield, and is therefore suitable for mass production of HEMTs and MMICs

Keywords

III-V semiconductors; electron beam lithography; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.06 to 0.2 micron; InP; InP HEMT; MM-wave device; MMIC; PMGI resist; PMMA layer; T-gate fabrication; electron beam lithography; mass production; process window; selective development; yield; Electron beams; HEMTs; Indium phosphide; Lithography; MMICs; MODFETs; Millimeter wave technology; Optical sensors; Production; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773769

Filename

773769