DocumentCode :
3401742
Title :
Resonant tunneling diode based on nitride gallium nanostructural cathode
Author :
Goncharuk, M.N. ; Karushkin, F.N.
Author_Institution :
SRI Orion, Kiev
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
622
Lastpage :
623
Abstract :
Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer AlxGa1-xN-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper frequency of diode negative conductance band is in sub-millimeter range of wave length.
Keywords :
III-V semiconductors; aluminium compounds; cathodes; gallium compounds; resonant tunnelling diodes; submillimetre wave diodes; AlGaN-GaN; cathode coating layers; nanostructural cathode; negative conductance band; resonant tunneling diode; two-layer AlxGa1-xN-GaN coating; Anodes; Cathodes; Diodes; Gallium arsenide; Gallium nitride; Helium; Hidden Markov models; III-V semiconductor materials; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676530
Filename :
4676530
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3401742
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