Title :
Response of silicon semiconductor detector to low-energy ions
Author :
Sato, Fuminobu ; Tanaka, Teruya ; Iida, Toshiyuki
Author_Institution :
Dept. of Electron. Inf. Syst. & Energy Eng., Osaka Univ., Japan
Abstract :
The response of a silicon surface barrier detector to low-energy ions below 40 keV were measured utilizing a single ion irradiation system. Data on pulse-height response to H+, He+ and Ar+ in the low-energy region were precisely obtained with a typical energy spectroscopy system and an averaging method with a digital oscilloscope. The experimental data agreed generally with results calculated by the computer simulation code for ion transportation, MARLOWE
Keywords :
silicon radiation detectors; 0 to 40 keV; Ar; Ar+; H; H+; He; He+; MARLOWE; Si semiconductor detector response; averaging method; computer simulation code; low-energy ions; pulse-height response; single ion irradiation system; surface barrier detector; Computer simulation; Current measurement; Detectors; Energy measurement; Helium; Power engineering and energy; Pulse measurements; Silicon; Spectroscopy; Testing;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.774287
