Title :
A DC model for the high electron mobility transistor (HEMT)
Author :
Saleh, M. ; El-Nokali, M.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n s and nt were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the model parameters. The current contribution due to the parasitic MESFET in AlGaAs relative to the total current was determined. Second-order effects were included in the model. The theoretical predictions of the model are compared with experimental data and are found to be in good agreement over a wide range of bias conditions
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; 2DEG; AlGaAs; DC model; HEMT; bias conditions; closed-form analytical expressions; conduction mechanism; discontinuity; high electron mobility transistor; parasitic MESFET; second-order effects; Conducting materials; Digital integrated circuits; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Microwave FETs; Microwave transistors; Semiconductor materials; Voltage;
Conference_Titel :
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-0620-1
DOI :
10.1109/MWSCAS.1991.252171
