A DC model for the high electron mobility transistor (HEMT)

Author

Saleh, M. ; El-Nokali, M.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

fYear

1991

fDate

14-17 May 1991

Firstpage

360

Abstract

A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n _s and n_t were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the model parameters. The current contribution due to the parasitic MESFET in AlGaAs relative to the total current was determined. Second-order effects were included in the model. The theoretical predictions of the model are compared with experimental data and are found to be in good agreement over a wide range of bias conditions

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; 2DEG; AlGaAs; DC model; HEMT; bias conditions; closed-form analytical expressions; conduction mechanism; discontinuity; high electron mobility transistor; parasitic MESFET; second-order effects; Conducting materials; Digital integrated circuits; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Microwave FETs; Microwave transistors; Semiconductor materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-0620-1

Type

conf

DOI

10.1109/MWSCAS.1991.252171

Filename

252171