Title :
A CAD model for MOS transistors valid in all regions of operation
Author :
Kushaa, A. Afzali ; El Nokali, M.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
An accurate and computationally efficient charge-based model for the intrinsic capacitances in MOS transistors is proposed. The model is valid in the subthreshold regime and is based on the quasi-static approximation. By integrating this model with a corresponding one in the strong inversion regime, a complete model valid in all regions of operation is presented. An interpolation scheme which guarantees the continuity of the drain current and the capacitances as well as their derivatives is used to provide a smooth transition from subthreshold to strong inversion. The theoretical predictions of the model are compared to the numerically simulated data extracted from MINIMOS 4.0 and are found to be in good agreement over a wide range of voltages
Keywords :
circuit CAD; insulated gate field effect transistors; interpolation; inversion layers; semiconductor device models; CAD model; MINIMOS 4.0; MOS transistors; charge-based model; drain current; interpolation scheme; intrinsic capacitances; quasi-static approximation; strong inversion regime; subthreshold regime; Capacitance; Circuit simulation; Computational modeling; Electrons; Equations; Extrapolation; Fabrication; Interpolation; MOSFET circuits; Voltage;
Conference_Titel :
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-0620-1
DOI :
10.1109/MWSCAS.1991.252172
