Title :
Characterization of radiation damage and thermal annealing effects on thallium bromide nuclear radiation detectors
Author :
Hitomi, K. ; Shoji, T. ; Suehiro, T. ; Hiratate, Y.
Author_Institution :
Dept. of Electron., Tohoku Inst. of Technol., Sendai, Japan
Abstract :
In this study, TlBr detectors were irradiated with 25 MeV protons accelerated by an AVF cyclotron. Isothermal annealing was performed to restore the performance of the detectors. In order to characterize the radiation damage and thermal annealing effects on the TlBr detectors, we measured current-voltage (I-V) characteristics, mobility-lifetime (μτ) products and spectrometric responses. The I-V and μτ measurements suggest that electron traps have been induced by 25 MeV protons in the TlBr crystals. X- and γ-ray energy spectra were measured for two different electronic conditions: the electric signals induced mainly by electron carriers traversing the crystal were used for one case and the signal induced by hole carriers were used in the other case. After irradiation of 25 MeV protons, the 241Am X- and γ-ray spectra obtained in the former showed significantly degraded energy resolution. No degradation of energy resolution, however, was observed in the latter case. Noticeable improvements of the degraded detector performance have been observed after the thermal annealing
Keywords :
II-VI semiconductors; annealing; electron traps; proton effects; semiconductor counters; thallium compounds; 25 MeV; TlBr; TlBr detectors; current-voltage characteristics; degraded energy resolution; electron carriers; electron traps; gamma-ray energy spectra; isothermal annealing; mobility-lifetime; radiation damage; spectrometric responses; thallium bromide nuclear radiation detectors; thermal annealing effects; Acceleration; Annealing; Charge carrier processes; Current measurement; Cyclotrons; Energy resolution; Isothermal processes; Protons; Radiation detectors; Thermal degradation;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.774303