Evaluation of radiation damaged p-in-n and n-in-n silicon microstrip detectors

Author

Unno, Y. ; Yamashita, T. ; Terada, Shuhei ; Kohriki, T. ; Moorhead, G. ; Iwata, Y. ; Takashima, R. ; Ikeda, M. ; Kitayama, E. ; Sato, K. ; Kondo, Toshiaki ; Ohsugi, T. ; Nakano, I. ; Fukunaga, C. ; Phillips, P.W. ; Robinson, D. ; Johansen, L.G. ; Riedler,

Author_Institution

Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba, Japan

Volume

2

fYear

1998

fDate

1998

Firstpage

846

Abstract

Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and beam tested. Comparison was made for the p-in-n and the n-in-n in high resistivity wafers, and the p-inn in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the charge signals were split into strips in the p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beamtest results

Keywords

capacitance; proton effects; silicon radiation detectors; Si; beamtest results; body capacitance measurement; charge collection; high resistivity wafers; radiation damage; radiation damaged n-in-n silicon microstrip detectors; radiation damaged p-in-n silicon microstrip detectors; Conductivity; Laboratories; Microstrip components; P-n junctions; Particle accelerators; Physics; Radiation detectors; Silicon radiation detectors; Strips; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE

Conference_Location

Toronto, Ont.

ISSN

1082-3654

Print_ISBN

0-7803-5021-9

Type

conf

DOI

10.1109/NSSMIC.1998.774304

Filename

774304