DocumentCode
3401991
Title
Effects of terahertz radiation generation by homogeneous laser-excited semiconductors
Author
Ziaziulia, P.A. ; Malevich, V.L. ; Manak, I.S.
Author_Institution
Belarussian State Univ., Minsk
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
652
Lastpage
653
Abstract
Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier electro-optical effect in semiconductors in the presence of the constant electric field is investigated.
Keywords
electro-optical effects; high-speed optical techniques; narrow band gap semiconductors; nonlinear optics; terahertz wave generation; femtosecond-laser-excited semiconductors; free-carrier electro-optical effect; homogeneous laser-excited semiconductors; magnetic field impact; narrow band-gap semiconductors; nonlinear optical rectification; surface depletion; terahertz emission; terahertz radiation generation; Analytical models; Gallium arsenide; IEEE catalog; Microwave technology; Organizing; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676543
Filename
4676543
Link To Document