DocumentCode :
3401991
Title :
Effects of terahertz radiation generation by homogeneous laser-excited semiconductors
Author :
Ziaziulia, P.A. ; Malevich, V.L. ; Manak, I.S.
Author_Institution :
Belarussian State Univ., Minsk
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
652
Lastpage :
653
Abstract :
Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier electro-optical effect in semiconductors in the presence of the constant electric field is investigated.
Keywords :
electro-optical effects; high-speed optical techniques; narrow band gap semiconductors; nonlinear optics; terahertz wave generation; femtosecond-laser-excited semiconductors; free-carrier electro-optical effect; homogeneous laser-excited semiconductors; magnetic field impact; narrow band-gap semiconductors; nonlinear optical rectification; surface depletion; terahertz emission; terahertz radiation generation; Analytical models; Gallium arsenide; IEEE catalog; Microwave technology; Organizing; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676543
Filename :
4676543
Link To Document :
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