A 0.6V 200kHz silicon oscillator with temperature compensation for wireless sensing applications

Author

Chien-Ying Yu ; Chen Yi Lee

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-10 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a silicon oscillator suitable for low-cost and low-power wireless sensing applications. With the comparisons of ring oscillators in different temperature coefficients, the frequency of an internal ring oscillator is estimated and parameterized by a second-order polynomial. Accordingly, the output clock is compensated in a frequency division fashion. The oscillator is implemented in 90-nm CMOS technology with an area of 0.04mm². Operating at 0.6V, the output frequency is within 200±1kHz over the temperature range of Ȓ25°C to 125°C with power consumption of 48μW.

Keywords

CMOS integrated circuits; elemental semiconductors; low-power electronics; oscillators; sensors; silicon; CMOS technology; frequency 200 kHz; internal ring oscillator; low-power wireless sensing; output clock; second-order polynomial; silicon oscillator; size 90 nm; temperature 25 degC to 125 degC; temperature compensation; voltage 0.6 V; Frequency conversion; Frequency estimation; Lead; Nickel; Oscillators; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on

Conference_Location

Seoul

ISSN

1548-3746

Print_ISBN

978-1-61284-856-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2011.6026284

Filename

6026284