DocumentCode :
3402164
Title :
Substrate batch effect on GaAs MESFET characteristics under ultra-short pulses exposure
Author :
Bobreshov, A.M. ; Korovchenko, I.S. ; Stepkin, V.A. ; Uskov, G.K.
Author_Institution :
Voronezh State Univ., Voronezh
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
672
Lastpage :
673
Abstract :
Experimental investigation of GaAs MESFET substrate batch effect on characteristics of ultra-short pulses exposure was carried out. This effect was developed and described.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; MESFET; ultra-short pulses exposure; Chromium; Gallium arsenide; MESFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676551
Filename :
4676551
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3402164
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