ZnO film preparation by reactive sputtering method

Author

Yunhua, Wang ; Lu, Zhou ; Baoshan, Jia ; Duanyuan, Bai ; Jing, Xu ; Xin, Gao ; Baoxue, Bo

Author_Institution

State Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

38

Lastpage

40

Abstract

In this paper, ZnO films were deposited on GaAs (100) substrate as the protective-coating and antireflection coating of semiconductor laser facets, in order to improve the lifetime and reliability. This study investigated the microstructure of ZnO films deposited on GaAs (100) substrate with different sputtering conditions containing RF power, pressure, etc. The optical thickness(nm) of ZnO films was λ/4=96nm, the transmittance was up to 90% at the wavelength of 808nm, and the refractive index n is 1.9. The surface morphology of ZnO films was uniform and smooth; it may be desirable for semiconductor facet film application.

Keywords

II-VI semiconductors; antireflection coatings; infrared spectra; protective coatings; refractive index; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; wide band gap semiconductors; zinc compounds; GaAs; GaAs (100 ) substrate; RF power; ZnO; antireflection coating; film reliability; lifetime improvement; microstructure; optical thickness; protective coating; reactive sputtering method; refractive index; semiconductor laser facets; size 96 nm; surface morphology; transmittance; wavelength 808 nm; Films; Optical surface waves; Semiconductor lasers; Sputtering; Substrates; Surface morphology; Zinc oxide; Key words-ZnO; RF magnetron sputtering; antireflection film; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159310

Filename

6159310