• DocumentCode
    3403637
  • Title

    Research on radiation effect and reinforce of radiation resistance for semiconductor lasers

  • Author

    Liu, Haoyuan ; Qu, Yi ; Duan, Yao ; Wang, Wei

  • Author_Institution
    State Key Lab. of High Power Semicond. lasers, Changchun Univ. of Sci. & Technol., Changchun, China
  • fYear
    2011
  • fDate
    12-16 Oct. 2011
  • Firstpage
    41
  • Lastpage
    45
  • Abstract
    This paper introduces the space radiation environment, and its influence on the semiconductor lasers, analysis generating mechanism which is including total dose effect of radiation, SEU (Single Event Upset), Displacement effect and The surface charge and discharge effect. And through adopt to the way of E-beam evaporator, depositting Y2O3-ZrO2 film on the semiconductor lasers cavity surface to prove the ability of semiconductor lasers space resist radiation, use γ-ray irradiation, analysis important indicator of laser like output power of deposit film before and after, current power curve and so on.
  • Keywords
    gamma-ray effects; laser cavity resonators; laser reliability; optical communication equipment; optical links; protective coatings; semiconductor lasers; γ-ray irradiation; E-beam evaporator; Y2O3-ZrO2; discharge effect; laser cavity; radiation effect; radiation resistance; semiconductor lasers; surface charge; total dose effect; Atomic beams; Films; Protons; Radiation effects; Refractive index; Semiconductor lasers; Anti-radiation Semiconductor Lasers in Space; ZrO2-Y2O3 film; irradiation test; the space radiation environment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4577-0794-0
  • Type

    conf

  • DOI
    10.1109/AISMOT.2011.6159311
  • Filename
    6159311