DocumentCode
3403637
Title
Research on radiation effect and reinforce of radiation resistance for semiconductor lasers
Author
Liu, Haoyuan ; Qu, Yi ; Duan, Yao ; Wang, Wei
Author_Institution
State Key Lab. of High Power Semicond. lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear
2011
fDate
12-16 Oct. 2011
Firstpage
41
Lastpage
45
Abstract
This paper introduces the space radiation environment, and its influence on the semiconductor lasers, analysis generating mechanism which is including total dose effect of radiation, SEU (Single Event Upset), Displacement effect and The surface charge and discharge effect. And through adopt to the way of E-beam evaporator, depositting Y2O3-ZrO2 film on the semiconductor lasers cavity surface to prove the ability of semiconductor lasers space resist radiation, use γ-ray irradiation, analysis important indicator of laser like output power of deposit film before and after, current power curve and so on.
Keywords
gamma-ray effects; laser cavity resonators; laser reliability; optical communication equipment; optical links; protective coatings; semiconductor lasers; γ-ray irradiation; E-beam evaporator; Y2O3-ZrO2; discharge effect; laser cavity; radiation effect; radiation resistance; semiconductor lasers; surface charge; total dose effect; Atomic beams; Films; Protons; Radiation effects; Refractive index; Semiconductor lasers; Anti-radiation Semiconductor Lasers in Space; ZrO2-Y2O3 film; irradiation test; the space radiation environment;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
Conference_Location
Harbin
Print_ISBN
978-1-4577-0794-0
Type
conf
DOI
10.1109/AISMOT.2011.6159311
Filename
6159311
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