DocumentCode :
3403880
Title :
Ultra-low voltage integrated receivers in nanoscale CMOS
Author :
Balankutty, Ajay ; Kinget, Peter R.
Author_Institution :
Radio Integration Res., Intel Corp., Hillsboro, OR, USA
fYear :
2011
fDate :
7-10 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
CMOS process scaling has lead to lower supply voltages for transistors. The sub-1V supply voltage in modern CMOS nanoscale processes coupled with the need to provide highly integrated solutions in embedded applications requires us to rethink the design of analog and RF circuits. We present design techniques for RF transceivers operating from ultra voltage (ULV) supplies in standard digital processes. In this paper we systematically look at the architectural and circuit design techniques that enable the robust design of ULV wireless receivers. We will present three integrated receivers operating from 0.5-0.6V that target WPAN and wide-area cellular network applications.
Keywords :
CMOS integrated circuits; MOSFET; analogue integrated circuits; cellular radio; personal area networks; radio transceivers; radiofrequency integrated circuits; CMOS process scaling; RF circuits; RF transceivers; ULV wireless receivers; WPAN; analog circuits; circuit design; embedded applications; nanoscale CMOS; sub-1V supply voltage; transistors; ultra-low voltage integrated receivers; voltage 0.5 V to 0.6 V; wide-area cellular network; Biological system modeling; CMOS integrated circuits; Filtering; Mixers; Receivers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
ISSN :
1548-3746
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2011.6026383
Filename :
6026383
Link To Document :
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