• DocumentCode
    3404031
  • Title

    Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

  • Author

    Coldren, C.W. ; Spruytte, S.G. ; Harris, J.S. ; Larson, M.C.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    457
  • Abstract
    Employing InGaNAs materials, low wavelength active regions with emission at 1.3 μm have been developed on GaAs substrates. Broad area, single quantum well, in-plane lasers with thresholds as low as 1.1 kA/cm2 were fabricated
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 mum; GaAs; GaAs substrates; InGaNAs; InGaNAs materials; broad area single quantum well in-plane lasers; elemental source molecular beam epitaxy; group III-nitride-arsenide long wavelength lasers; low wavelength active regions; thresholds; Costs; Diode lasers; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Optical materials; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.811796
  • Filename
    811796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3404031