• DocumentCode
    3404059
  • Title

    Low threshold and high temperature characteristic of 1.3 μm InAsP/AlGaInAs MQW ACIS lasers

  • Author

    Iwai, N. ; Shimizu, H. ; Yamanaka, N. ; Kumada, K. ; Mukaihara, T. ; Kasukawa, A.

  • Author_Institution
    Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    461
  • Abstract
    A low threshold current (11.2 mA@25°C) with high characteristic temperature (T0=100 K) has been obtained in 1.3 μm InAsP/AlGaInAs MQW lasers by using ACIS (Al-oxide confined inner stripe) lasers. Less temperature sensitive quantum efficiency (-0.01 dB/K) was observed
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.3 μm InAsP/AlGaInAs MQW ACIS lasers; 1.3 mum; 100 K; 11.2 mA; 25 C; Al-oxide confined inner stripe laser; InAsP-AlGaInAs; high temperature characteristic; low threshold characteristic; temperature sensitive quantum efficiency; Electrons; Gas lasers; Laser modes; Optical waveguides; Oxidation; Quantum well devices; Quantum well lasers; Temperature sensors; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.811798
  • Filename
    811798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3404059