Title :
Low threshold and high temperature characteristic of 1.3 μm InAsP/AlGaInAs MQW ACIS lasers
Author :
Iwai, N. ; Shimizu, H. ; Yamanaka, N. ; Kumada, K. ; Mukaihara, T. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
A low threshold current (11.2 mA@25°C) with high characteristic temperature (T0=100 K) has been obtained in 1.3 μm InAsP/AlGaInAs MQW lasers by using ACIS (Al-oxide confined inner stripe) lasers. Less temperature sensitive quantum efficiency (-0.01 dB/K) was observed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.3 μm InAsP/AlGaInAs MQW ACIS lasers; 1.3 mum; 100 K; 11.2 mA; 25 C; Al-oxide confined inner stripe laser; InAsP-AlGaInAs; high temperature characteristic; low threshold characteristic; temperature sensitive quantum efficiency; Electrons; Gas lasers; Laser modes; Optical waveguides; Oxidation; Quantum well devices; Quantum well lasers; Temperature sensors; Threshold current; Waveguide lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811798
