Output properties of photovoltaic detectors irradiated under femtosecond pulses

Author

Zhiwei, Dong ; Shuheng, Su ; Yuanqin, Xia ; Deying, Chen ; Kun, Lv

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Tunable laser, Harbin Inst. of Technol., Harbin, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

124

Lastpage

126

Abstract

Output properties of Si based photovoltaic detectors were researched applying femtosecond pulses with different repetition rates. The output properties of these detectors with different load conditions were also researched. The linear response domain of PIN detector with external reverse bias voltage was found quite large for different femtosecond pulses repetition rates. The sensitivity of PN detector was found much higher when applying external reverse bias voltage with femtosecond repetition rate 76 MHz. The saturation effect of PN detector was attributed to the slow response speed of the photovoltaic detector.

Keywords

elemental semiconductors; infrared detectors; optical pulse generation; p-i-n photodiodes; photodetectors; silicon; PIN detector; Si; external reverse bias voltage; femtosecond pulses; femtosecond repetition rate; frequency 76 MHz; linear response; photovoltaic detectors; Detectors; Photovoltaic systems; Power lasers; Silicon; Ultrafast electronics; detectors; femtosecond; photovoltaic;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159333

Filename

6159333