Improved photoluminescence from passivated InP surface by (NH4)2S treatment

Author

Bo Wang ; Zhipeng Wei ; Mei Li ; Lu Zhou ; Yongqin Hao ; Zhankun Weng ; Baoxue Bo ; Guojun Liu ; Yang Liu ; Zuobin Wang

Author_Institution

Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

142

Lastpage

146

Abstract

In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of InP substrate. The optical properties were measured by PL (Photoluminescence) measurement, the luminescence intensity increased about 7 times when the passivated time was 15 min. The reasons of enhanced luminescence were also discussed. After passivating, the surface morphology and electrical properties were analyzed by atomic force microscopy (AFM) and Hall effect, respectively.

Keywords

Hall effect; III-V semiconductors; atomic force microscopy; indium compounds; passivation; photoluminescence; surface morphology; AFM; Hall effect; InP; ammonium sulfide; atomic force microscopy; electrical properties; luminescence intensity; passivation; photoluminescence; surface morphology; Indium phosphide; Passivation; Photoluminescence; Semiconductor device measurement; Surface morphology; InP; photoluminescence; sulfide passivation; surface states;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159338

Filename

6159338