Title :
Improved photoluminescence from passivated InP surface by (NH4)2S treatment
Author :
Bo Wang ; Zhipeng Wei ; Mei Li ; Lu Zhou ; Yongqin Hao ; Zhankun Weng ; Baoxue Bo ; Guojun Liu ; Yang Liu ; Zuobin Wang
Author_Institution :
Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of InP substrate. The optical properties were measured by PL (Photoluminescence) measurement, the luminescence intensity increased about 7 times when the passivated time was 15 min. The reasons of enhanced luminescence were also discussed. After passivating, the surface morphology and electrical properties were analyzed by atomic force microscopy (AFM) and Hall effect, respectively.
Keywords :
Hall effect; III-V semiconductors; atomic force microscopy; indium compounds; passivation; photoluminescence; surface morphology; AFM; Hall effect; InP; ammonium sulfide; atomic force microscopy; electrical properties; luminescence intensity; passivation; photoluminescence; surface morphology; Indium phosphide; Passivation; Photoluminescence; Semiconductor device measurement; Surface morphology; InP; photoluminescence; sulfide passivation; surface states;
Conference_Titel :
Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4577-0794-0
DOI :
10.1109/AISMOT.2011.6159338
