Influence of ion beam cleaning on properties of HfO2 thin films

Author

Lei, Liu ; Yi, Qu ; Bo, Zhao

Author_Institution

Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

150

Lastpage

152

Abstract

In this paper, we introduced the applications of ion beam cleaning in the preparation of HfO₂ laser films. The characteristics of refractive index and laser-induced damage threshold were measured. The results showed that the refractive index and laser-induced damage thresholds of HfO₂ films with ion beam cleaning are higher than untreated sample. The refractive index range of HfO₂ films with ion beam assisted cleaning is 2.05-1.96 in the 400nm to 900nm wavelength range. The refractive index range of samples without ion beam cleaning is 1.98-1.87 in the same wavelength range. Their laser-induced damage thresholds was 1.75J/cm² and 1.25J/cm², respectively. Shows that ion beam cleaning is a simple and effective technology to improve laser-induced damage thresholds.

Keywords

dielectric thin films; hafnium compounds; ion beam applications; laser beam effects; optical films; refractive index; surface cleaning; HfO₂; ion beam cleaning; laser films; laser-induced damage threshold; refractive index; Cleaning; Films; Ion beams; Laser beams; Measurement by laser beam; Refractive index; Semiconductor lasers; ion beam cleaning; laser film; laser-induced damage; theresholds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159340

Filename

6159340