DocumentCode :
3404216
Title :
Influence of ion beam cleaning on properties of HfO2 thin films
Author :
Lei, Liu ; Yi, Qu ; Bo, Zhao
Author_Institution :
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear :
2011
fDate :
12-16 Oct. 2011
Firstpage :
150
Lastpage :
152
Abstract :
In this paper, we introduced the applications of ion beam cleaning in the preparation of HfO2 laser films. The characteristics of refractive index and laser-induced damage threshold were measured. The results showed that the refractive index and laser-induced damage thresholds of HfO2 films with ion beam cleaning are higher than untreated sample. The refractive index range of HfO2 films with ion beam assisted cleaning is 2.05-1.96 in the 400nm to 900nm wavelength range. The refractive index range of samples without ion beam cleaning is 1.98-1.87 in the same wavelength range. Their laser-induced damage thresholds was 1.75J/cm2 and 1.25J/cm2, respectively. Shows that ion beam cleaning is a simple and effective technology to improve laser-induced damage thresholds.
Keywords :
dielectric thin films; hafnium compounds; ion beam applications; laser beam effects; optical films; refractive index; surface cleaning; HfO2; ion beam cleaning; laser films; laser-induced damage threshold; refractive index; Cleaning; Films; Ion beams; Laser beams; Measurement by laser beam; Refractive index; Semiconductor lasers; ion beam cleaning; laser film; laser-induced damage; theresholds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4577-0794-0
Type :
conf
DOI :
10.1109/AISMOT.2011.6159340
Filename :
6159340
Link To Document :
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