Title :
The impact of correlation between NBTI and TDDB on the performance of digital circuits
Author :
Hong Luo ; Yu Wang ; Velamala, Jyothi ; Yu Cao ; Yuan Xie ; Huazhong Yang
Author_Institution :
Dept. of E.E., Tsinghua Univ., Beijing, China
Abstract :
With integrated circuits scale into the nano-scale era, aging effect becomes one of the most important design challenges. Both the biased temperature instability (BTI) and time-dependent dielectric breakdown (TDDB) can significantly degrade the performance of the circuits. In this paper, we consider the correlation between BTI and TDDB, and apply the correlation model to digital circuit analysis for the first time. The results show that the correlation can lead to 10.42% further more delay degradation.
Keywords :
ageing; digital integrated circuits; electric breakdown; NBTI; TDDB; aging effect; correlation impact; digital circuits; integrated circuits scale; nanoscale era; negative biased temperature instability; time-dependent dielectric breakdown; CMOS integrated circuits; Correlation; Integrated circuit modeling; Logic gates; Reliability; Resistance; Silver; Aging; BTI; Correlation; TDDB;
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2011.6026408
