Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Author

Mizumoto, Tetsuya ; Yokoi, Hideki ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

2

fYear

1999

fDate

1999

Firstpage

503

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O₂ plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator

Keywords

III-V semiconductors; contact angle; gallium arsenide; garnets; indium compounds; integrated optics; integrated optoelectronics; magneto-optical isolators; semiconductor lasers; surface treatment; wafer bonding; GaInAsP; GaInAsP surfaces; O₂ plasma activated GaInAsP; bonding; contact angle measurement; garnet crystals; hydrophilicity; laser diode; magnetooptic garnet; optical isolator; wafer direct bonding; wafer surface treatment; Crystals; Diode lasers; Gain measurement; Garnets; Goniometers; Integrated optics; Isolators; Plasma measurements; Surface treatment; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811819

Filename

811819