Title :
Wafer surface treatment for bonding GaInAsP and magnetooptic garnet
Author :
Mizumoto, Tetsuya ; Yokoi, Hideki ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator
Keywords :
III-V semiconductors; contact angle; gallium arsenide; garnets; indium compounds; integrated optics; integrated optoelectronics; magneto-optical isolators; semiconductor lasers; surface treatment; wafer bonding; GaInAsP; GaInAsP surfaces; O2 plasma activated GaInAsP; bonding; contact angle measurement; garnet crystals; hydrophilicity; laser diode; magnetooptic garnet; optical isolator; wafer direct bonding; wafer surface treatment; Crystals; Diode lasers; Gain measurement; Garnets; Goniometers; Integrated optics; Isolators; Plasma measurements; Surface treatment; Wafer bonding;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811819
