Title :
1.3 μm low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array
Author :
Iwai, Norihiro ; Mukaihara, Toshikazu ; Kasukawa, Akihiko
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Novel long wavelength in-plane lasers using selective oxidation of Al-containing layer have been reviewed. Both highly strained AlAs and lattice-matched AlInAs layers are used for oxidation. Newly developed ACIS (Al-oxide Confined Inner Stripe) lasers are one of the promising candidates for high performance, low-cost light sources
Keywords :
III-V semiconductors; aluminium compounds; laser transitions; oxidation; quantum well lasers; semiconductor laser arrays; 1.3 mum; ACIS laser array; Al-containing layer; AlAs; AlInAs; high performance low-cost light sources; highly strained AlAs; lattice-matched AlInAs layers; long wavelength in-plane lasers; low threshold Al-oxide confined inner stripe lasers; oxidation; selective oxidation; Aging; Gas lasers; Optical arrays; Optical device fabrication; Optical surface waves; Oxidation; Surface morphology; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811830
