Highly-efficient laser with self-aligned waveguide and current confinement by selective oxidation

Author

Vawter, G.A. ; Blum, O. ; Allerman, A. ; Gao, Y.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

531

Abstract

We have demonstrated a highly efficient buried oxide waveguide (BOW) laser using dual selectively oxidized AlGaAs layers to form both the optical waveguide and the current confinement regions. Optimization of the waveguide design, oxide layer placement, and bi-parabolic grading of the heterointerfaces on both sides of the AlGaAs layers for oxidation has yielded 95% external differential quantum efficiency and 40% wallplug efficiency from a laser that is very simple to fabricate and does not require epitaxial regrowth of any kind

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; oxidation; semiconductor lasers; waveguide lasers; 40 percent; 95 percent; AlGaAs; bi-parabolic grading; buried oxide waveguide laser; current confinement; dual selectively oxidized AlGaAs layers; external differential quantum efficiency; heterointerfaces; highly-efficient laser; optical waveguide; oxide layer placement; selective oxidation; self-aligned waveguide; wallplug efficiency; waveguide design; Apertures; Heterojunctions; Laser modes; Numerical simulation; Optical waveguides; Oxidation; Stress; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811833

Filename

811833