Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture

Author

Choi, Won-Jin ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

533

Abstract

We discuss the growth and properties of an AlGaInP edge emitting diode laser. The laser structure was grown by close space low pressure MOCVD. The typical L-I characteristics of the laser with a 4 μm current aperture are shown. The laser has a 350 μm long cavity. The threshold current is as low as 12 mA. The external differential quantum efficiency is 37.4 %. The lasing wavelength shown is 637 nm. The threshold current decreases monotonically as the aperture size decreases to 4 μm. When the aperture size reduced further, the threshold current increases

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; laser transitions; oxidation; semiconductor growth; semiconductor lasers; 12 mA; 350 mum; 37.4 percent; 4 mum; 630 nm; 637 nm; AlAs; AlAs native oxide current aperture; AlGaInP; AlGaInP edge emitting diode laser; L-I characteristics; aperture size; close space low pressure MOCVD; external differential quantum efficiency; lasing wavelength; low threshold 630 nm band AlGaInP diode laser; threshold current; Apertures; Buffer layers; Diode lasers; Gallium arsenide; Laser modes; Optical fiber communication; Oxidation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811834

Filename

811834