Title :
A low temperature coefficient 4th-order curvature-compensated CMOS bandgap reference
Author :
Xiaoyun, Tan ; Chen, Liang ; Min, Shi ; Guanshi, Wang
Author_Institution :
MEMS Center, Harbin Inst. of Technol., Harbin, China
Abstract :
The bandgap reference voltage source can provides a steady reference voltage when ambient temperature fluctuates. Based on the principle of curvature-compensated bandgap reference widely utilized at present, this paper analyzes the coefficients of high-order items of the voltage-temperature function expanded in Taylor series. And a low temperature coefficient (1.27ppm/°C) 4th-order curvature-compensated CMOS bandgap reference voltage source operated at -40°C~100°C, is proposed in this paper. The circuit is designed in 0.5μm CMOS technology and operating at 5V supply.
Keywords :
CMOS integrated circuits; integrated circuit design; low-power electronics; reference circuits; series (mathematics); CMOS technology; Taylor series; ambient temperature; bandgap reference voltage source; circuit design; high-order items; low temperature coefficient 4th-order curvature-compensated CMOS bandgap reference; size 0.5 mum; steady reference voltage; voltage 5 V; voltage-temperature function; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistance; Taylor series; Temperature distribution; bandgap reference; high-order curvature-compensated; low temperature coefficient;
Conference_Titel :
Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4577-0794-0
DOI :
10.1109/AISMOT.2011.6159366
