Title :
Purcell effect and the bias-free pulse response of vertical-cavity surface-emitting lasers
Author :
Deppe, D.G. ; Huang, H. ; Graham, L.A. ; Huffaker, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Although microcavity confinement has been proposed for some time as a means to improve laser characteristics, it has been difficult to connect these predictions to actual laser characteristics. We believe that the reason for this is at least partly due to the lack of rate equations that accurately include the microcavity confinement in terms of straightforward design parameters such as the mode size or spontaneous linewidth. Instead, great emphasis is placed on the spontaneous coupling coefficient β without considering how β explicitly depends on the cavity and active region parameters. This has prevented the inclusion of the cavity effects in rate equations In general, β depends on the mode volume, the optical loss rate, the spontaneous linewidth, and the spontaneous lifetime, and the expression for β is known explicitly only in the limit that the cavity loss rate greatly exceeds the emitter dephasing rate (or spontaneous linewidth). We present experimental results showing the change in the spontaneous lifetime that can be achieved in apertured-microcavities such as the oxide-confined vertical cavity surface-emitting lasers. A cavity with InGaAlAs quantum dot (QD) light emitters is used to obtain electronic confinement to the aperture
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; microcavity lasers; optical losses; quantum well lasers; radiative lifetimes; semiconductor quantum dots; spectral line breadth; spontaneous emission; surface emitting lasers; InGaAlAs; InGaAlAs quantum dot light emitters; Purcell effect; active region parameters; aperture; apertured-microcavities; bias-free pulse response; cavity loss rate; design parameters; electronic confinement; emitter dephasing rate; microcavity confinement; mode size; mode volume; optical loss rate; oxide-confined vertical cavity surface-emitting lasers; rate equations; spontaneous coupling coefficient; spontaneous lifetime; spontaneous linewidth; vertical-cavity surface-emitting lasers; Equations; Laser modes; Laser transitions; Light emitting diodes; Microcavities; Optical losses; Quantum dot lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811850