DocumentCode :
3404899
Title :
Power dissipation at MOSFET gate port of class E amplifier
Author :
Kiri, Akito ; Sato, Mitsuhisa ; Kuga, Shotaro ; Xiuqin Wei ; Suetsugu, Tadashi
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
fYear :
2013
fDate :
20-23 Oct. 2013
Firstpage :
326
Lastpage :
329
Abstract :
In this paper, gate port power dissipation of class E amplifier is obtained as a function of amplitude and offset of gate signal with PSpice simulation.
Keywords :
MOSFET circuits; SPICE; amplifiers; MOSFET gate port; PSpice simulation; class E amplifier; gate port power dissipation; gate signal offset; Logic gates; PSpice simulation; class E amplifier; gate port; gate signal; power dissipation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Renewable Energy Research and Applications (ICRERA), 2013 International Conference on
Conference_Location :
Madrid
Type :
conf
DOI :
10.1109/ICRERA.2013.6749774
Filename :
6749774
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3404899
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