Title :
Terahertz generation in high purity semiconductors via 3 wave DFG and cross-reststrahlenband PM
Author :
Herman, Gregory S.
Author_Institution :
Sci. Appl. Int. Corp., Hampton, VA, USA
Abstract :
Difference frequency generation is being used in undoped, high-resistivity GaP to generate a tunable far-infrared, or terahertz, idler wave using near-infrared pump and signal sources. We have proposed a novel phasematching technique for terahertz generation valid for DFG interactions using cross-reststrahlen band PM. The pump and signal source frequencies must be on the adjacent side of the crystal´s reststrahlen band from the idler wave frequency. The formula predicts a large, but variable, tuning range around the perfectly phasematched terahertz frequency
Keywords :
III-V semiconductors; gallium compounds; microwave photonics; optical frequency conversion; optical modulation; optical phase matching; phase modulation; submillimetre wave generation; 3 wave DFG; GaP; cross-reststrahlenband PM; difference frequency generation; high purity semiconductors; idler wave frequency; near-infrared pump source; perfectly phasematched terahertz frequency; phasematching technique; signal source frequencies; terahertz generation; tunable far-infrared; tuning range; undoped high-resistivity GaP; Absorption; Coherence; Crystalline materials; Crystals; Frequency; Hydrogen; Out of order; Refractive index; Signal generators; Spectroscopy;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811857
