High power 3-12 μm laser diodes, recent advances and future trend

Author

Razeghi, M.

Author_Institution

Dept. of Electr. Eng., Northwestern Univ., Evanston, IL, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

599

Abstract

High performance interband laser structures emitting between 3 to 5 μm based on the InAsSbP material system have been developed. Lasers based on interband transitions offer advantages of high efficiencies and high output powers while requiring a low threshold power. Currently, three types of interband laser structures are considered as promising high power high temperature lasers: InAs-InAsSb-AlAsSb double heterostructures (DH), InAs-InAsSb-InAsP and InAs-InAsSb strained-layer superlattices (SLS)

Keywords

III-V semiconductors; indium compounds; laser transitions; quantum well lasers; technological forecasting; 3 to 12 mum; InAs-InAsSb; InAs-InAsSb strained-layer superlattices; InAs-InAsSb-AlAsSb; InAs-InAsSb-AlAsSb double heterostructures; InAs-InAsSb-InAsP; InAs-InAsSb-InAsP strained-layer superlattices; InAsSbP; InAsSbP material system; future trend; high efficiencies; high output powers; high performance interband laser structures; high power high temperature lasers; low threshold power; quantum cascade laser; recent advances; Bars; Diode lasers; Laser modes; Power generation; Power lasers; Pump lasers; Quantum cascade lasers; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811870

Filename

811870