DocumentCode :
3405699
Title :
3D implemented SRAM/DRAM hybrid cache architecture for high-performance and low power consumption
Author :
Inoue, Ken ; Hashiguchi, S. ; Ueno, Satoshi ; Fukumoto, Norihiro ; Murakami, Kazuki
Author_Institution :
Fac. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fYear :
2011
fDate :
7-10 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper introduces our research status focusing on 3D-implemented microprocessors. 3D-IC is one of the most interesting techniques to achieve high-performance, low-power VLSI systems. Stacking multiple dies makes it possible to implement microprocessor cores and large caches (or DRAM) into the same chip. Although this kind of integration has a great potential to bring a breakthrough in computer systems, its efficiency strongly depends on the characteristics of target application programs. Unfortunately, applying die stacking implementation causes performance degradation for some programs. To tackle this issue, we introduce a novel cache architecture consisting of a small but fast SRAM and a stacked large DRAM. The cache attempts to adapt to varying behavior of application programs in order to compensate for the negative impact of the die stacking approach.
Keywords :
DRAM chips; SRAM chips; cache storage; low-power electronics; memory architecture; microprocessor chips; three-dimensional integrated circuits; 3D implemented SRAM/DRAM hybrid cache architecture; 3D-IC; 3D-implemented microprocessor; computer system; die stacking; low-power VLSI system; microprocessor core; power consumption; stacked large DRAM; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
ISSN :
1548-3746
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2011.6026484
Filename :
6026484
Link To Document :
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