Title :
High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes
Author :
Ozbay, Ekmel ; Biyikli, Necmi ; Kimukin, Ibrahim ; Aytur, Orhan
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
We report our efforts on ITO-AlAs/GaAs based resonant cavity enhanced (RCE) Schottky photodiodes for operation at the first optical communication window (840 nm). The device structure is designed to achieve a low-loss (high Q) cavity around 840 nm. The layers are grown by MBE on a semi-insulating GaAs substrate. The resonant cavity is formed by an Al0.2Ga0.8As/AlAs DBR bottom mirror and a PECVD-grown Si3N4/SiO2 DBR top mirror, both centered at 840 nm. At the operation wavelength, only the active GaAs region absorbs the optical excitation
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; optical resonators; photodetectors; photodiodes; tin compounds; 840 nm; Al0.2Ga0.8As-AlAs; Al0.2Ga0.8As/AlAs DBR bottom mirror; GaAs; ITO-AlAs-GaAs; ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes; InSnO-AlAs-GaAs; MBE; PECVD-grown Si3N4/SiO2 DBR top mirror; Si3N4-SiO2; active GaAs region; first optical communication window; high Q; high-performance; low-loss cavity; operation wavelength; optical excitation; semi-insulating GaAs substrate; Absorption; Conducting materials; Distributed Bragg reflectors; Gallium arsenide; Gold; Indium tin oxide; Mirrors; Photodetectors; Photodiodes; Resonance;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811909
