Title :
Spray pyrolized copper indium gallium sulfide abosrober layers for thin film solar cells
Author :
Sankir, Nurdan Demirci ; Aydin, Erdogan ; Ugur, Enes
Author_Institution :
Dept. of Mater. Sci. & Nanotechnol. Eng., TOBB Univ. of Econ. & Technol., Ankara, Turkey
Abstract :
In this study, copper indium gallium sulfide (CuIn1-xGaxS2) films was deposited on glass substrates using ultrasonic spray pyrolysis technique (USP). The Ga/(In+Ga) molar ratio in the precursor solutions has been tailored to obtain the stoichiometric films. Chalcopyrite structure of the films was confirmed by XRD analysis. High absorption coefficient values have been obtained for all samples. It has been observed that the optimum Ga/(In+Ga) ratio in precursor was 0.5 for the best-performed CuInGaS2 thin films.
Keywords :
III-V semiconductors; X-ray diffraction; copper compounds; gallium compounds; indium compounds; pyrolysis; solar absorber-convertors; solar cells; ternary semiconductors; thin film devices; CuIn1-xGaxS2; XRD analysis; chalcopyrite structure; copper indium gallium sulfide abosrober layers; copper indium gallium sulfide films; glass substrates; high absorption coefficient values; stoichiometric films; thin film solar cells; ultrasonic spray pyrolysis technique; Gallium; Indium; Integrated optics; Optical films; Photovoltaic cells; X-ray scattering; chalcopyrite film; copper indium gallium sulfide; impact nozzle; thin film solar cells; ultrasonic spray pyrolysis;
Conference_Titel :
Renewable Energy Research and Applications (ICRERA), 2013 International Conference on
Conference_Location :
Madrid
DOI :
10.1109/ICRERA.2013.6749818
