Title :
The design of SiGe HBT direct-coupled LNA
Author :
Weiming, Yang ; Jianxin, Chen ; Wanbo, Xie ; Chen, Shi
Author_Institution :
Beijing Optoelectronics Technol. Lab., Beijing Univ. of Technol., China
Abstract :
A direct-coupled low noise amplifier was designed and fabricated on a Teflon substrate, using packaged SiGe HBTs BFP420 and chip type passive components. This SiGe LNA has the advantages such as the wide bandwidth (2.5GHz), the low noise figure (NF ≤ 2.23dB), the high power gain (S21 ≥ 26.7dB), the input and output VSWR are all less than 2. The design principle and technology features of the broadband amplifier was described. The computer simulated results were coincident with that of the test.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit design; low noise amplifiers; microwave amplifiers; wideband amplifiers; 2.5 GHz; SiGe; Teflon substrate; broadband amplifier; chip type passive components; direct-coupled low noise amplifier; heterojunction bipolar transistor; packaged HBT BFP420; Bandwidth; Broadband amplifiers; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Packaging; Silicon germanium;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606473
