The design of SiGe HBT direct-coupled LNA

Author

Weiming, Yang ; Jianxin, Chen ; Wanbo, Xie ; Chen, Shi

Author_Institution

Beijing Optoelectronics Technol. Lab., Beijing Univ. of Technol., China

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A direct-coupled low noise amplifier was designed and fabricated on a Teflon substrate, using packaged SiGe HBTs BFP420 and chip type passive components. This SiGe LNA has the advantages such as the wide bandwidth (2.5GHz), the low noise figure (NF ≤ 2.23dB), the high power gain (S21 ≥ 26.7dB), the input and output VSWR are all less than 2. The design principle and technology features of the broadband amplifier was described. The computer simulated results were coincident with that of the test.

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit design; low noise amplifiers; microwave amplifiers; wideband amplifiers; 2.5 GHz; SiGe; Teflon substrate; broadband amplifier; chip type passive components; direct-coupled low noise amplifier; heterojunction bipolar transistor; packaged HBT BFP420; Bandwidth; Broadband amplifiers; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Packaging; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606473

Filename

1606473