High temperature self-sustained pulsation in AlGaInP visible laser diodes with real refractive index guided self-aligned structure

Author

Imafuji, Osamu ; Fukuhisa, Toshiya ; Yuri, Masaaki ; Takayama, Toru ; Ohnishi, Toshikazu ; Kobayashi, Yasuhiro ; Mannoh, Masaya ; Yoshikawa, Akio ; Itoh, Kunio

Author_Institution

Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan

Volume

2

fYear

1999

fDate

1999

Firstpage

720

Abstract

High temperature self-sustained pulsation has been realized with a real refractive index guided self-aligned (RISA) structure which has a compressively strained-MQW for the active region. Self-sustained pulsation is maintained up to 75°C at an average power of 7 mW CW and the maximum operating current is as low as 60 mA. The maximum operating temperature for self-sustained pulsation is the highest ever reported

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; indium compounds; laser transitions; quantum well lasers; refractive index; waveguide lasers; 60 mA; 7 mW; 75 degC; AlGaInP; AlGaInP visible laser diodes; CW; average power; compressively strained-MQW; high temperature self-sustained pulsation; maximum operating current; maximum operating temperature; real refractive index guided self-aligned structure; Diode lasers; Optical feedback; Optical refraction; Optical variables control; Power generation; Refractive index; Semiconductor device noise; Semiconductor lasers; Space power stations; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811936

Filename

811936