Title :
Dead-space effect on noise in Si UV-selective avalanche photodiode
Author :
Pauchard, A. ; Besse, P.A. ; Popovic, R.S.
Author_Institution :
Inst. of Microsyst., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
In the recent years, a great deal of research has been devoted to dead-space effects in avalanche photodiodes (APD) with submicron multiplication regions. Measurements and theoretical models have shown that the multiplication noise in SAM-APDs and in GaAs and InP p+ in+ APDs decreases when the thickness of the multiplication layer is reduced. We present excess noise measurements of a Si ultraviolet-selective (UVS) APD with a 100 nm thick multiplication region. We show that these results are in excellent agreement with simulations using the dead-space model. The excess noise of our structure is much smaller than predicted by McIntyre´s continuum theory
Keywords :
avalanche photodiodes; elemental semiconductors; noise measurement; optical noise; optical variables measurement; photodetectors; silicon; ultraviolet detectors; 100 nm; Si; Si UV-selective avalanche photodiode; UV-selective avalanche photodiode; avalanche photodiodes; continuum theory; dead-space effect; dead-space model; excess noise; multiplication noise; multiplication region; noise; submicron multiplication regions; Avalanche photodiodes; Charge carrier processes; Electron devices; Gallium arsenide; Indium phosphide; Infrared sensors; Ionization; Noise measurement; Noise reduction; Thickness measurement;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811949