Title :
Low-loss and strongly confined InGaAsP-InP optical waveguide fabricated by benzocyclobutene wafer bonding
Author :
Ma, Yong ; Park, Seoijin ; Wang, Liwei ; Ho, Seng Tiong
Author_Institution :
McCormick Sch. of Eng. & Appl. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
Strongly confined and low loss optical waveguides are the key elements of many integrated optical devices. Recently, BCB, a relatively new class of organic polymers, have been used either as the guiding layer or bonding layer to fabricate low loss optical waveguides. In this paper, we report the fabrication and loss measurements of benzocyclobutene (BCB) bonded InGaAsP-InP optical waveguide with very strong two-dimensional confinement. The wafer structure for bonding is grown by molecular beam epitaxy (MBE)
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; molecular beam epitaxial growth; optical fabrication; optical losses; optical polymers; optical waveguides; wafer bonding; InGaAsP-InP; InGaAsP-InP optical waveguide; MBE; benzocyclobutene; benzocyclobutene wafer bonding; bonding layer; guiding layer; integrated optical devices; loss measurements; low loss optical waveguide fabrication; low loss optical waveguides; low-loss; molecular beam epitaxy; organic polymers; strongly confined; very strong two-dimensional confinement; wafer structure; Gallium arsenide; Indium phosphide; Optical buffering; Optical devices; Optical films; Optical filters; Optical losses; Optical waveguides; Substrates; Wafer bonding;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811953
