A high linearity InGaP/GaAs HBT up-conversion double balanced mixer with common base drive stage

Author

Kim, Se-Hwan ; Lee, Sang-Hun ; Shrestha, Bhanu ; Kim, Sun-jin ; Kennedy, Gary P. ; Kim, Nam-Young ; Cheon, Sang-Hoon

Author_Institution

RFIC Center, Kwangwoon Univ., Seoul, South Korea

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A high linearity double balanced mixer has been developed using InGaP/GaAs HBT technology. Features of the design include a common base drive stage and a common collector output buffer amplifier. The up-conversion mixer shows an input-referred 1-dB compression point (P_{1dB, IN}) of 15 dBm and a third order input intercept point (IIP3) of 21.6 dBm. The chip size of the developed mixer is 1.17 mm × 1 mm. The isolation of LO-RF and LO-IF in the up-conversion mixer shows 58.5 dB and 86.2 dB, respectively.

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; mixers (circuits); 1 mm; 1.17 mm; InGaP-GaAs; common base drive stage; common collector output buffer amplifier; heterojunction bipolar transistors; high linearity double balanced mixer; intermediate frequency; local oscillator frequency; up-conversion mixer; Antenna feeds; Base stations; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Linearity; Radiofrequency integrated circuits; Topology; Common Base Drive Stage; Double Balanced Mixer; High Linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606504

Filename

1606504