Title :
Actively stabilised, tunable single frequency operation of a vertical external cavity surface emitting laser
Author :
Holm, M.A. ; Burns, D. ; Ferguson, A.I. ; Dawson, M.D.
Author_Institution :
Wolfson Centre, Strathclyde Univ., Glasgow, UK
Abstract :
VCSELs based on InGaAs MQW structures are already being applied in pumping of erbium doped fibre amplifiers where high brightness beams are advantageous for coupling into single mode fibres. Within this paper we will describe the first single frequency operation of a VECSEL based on a GaAs structure operating around 870 nm. Such structures are expected to be of widespread use in spectroscopic applications due to their wavelength versatility, simplicity of design and stable narrow linewidth operation
Keywords :
III-V semiconductors; brightness; gallium arsenide; indium compounds; infrared sources; laser frequency stability; laser modes; laser tuning; quantum well lasers; spectroscopic light sources; surface emitting lasers; 870 nm; GaAs; GaAs structure; InGaAs; InGaAs MQW structures; VCSELs; VECSEL; actively stabilised tunable single frequency operation; erbium doped fibre amplifier pumping; high brightness beams; optical design; single frequency operation; single mode fibre coupling; spectroscopic applications; spectroscopic light sources; stable narrow linewidth operation; vertical external cavity surface emitting laser; wavelength versatility; Brightness; Doped fiber amplifiers; Erbium; Frequency; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical coupling; Quantum well devices; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811972
