Title :
Free carrier absorption in red VCSELs
Author :
Pinches, S.M. ; Onischenko, A. ; Sale, T.E. ; Woodhead, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
Slope efficiency and threshold current density data as a function of wavelength for ~665 nm AlGaInP MQW DBR VCSELs are presented. This data indicates that free carrier absorption an important loss mechanism in red VCSELs
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; infrared sources; laser transitions; light absorption; optical losses; quantum well lasers; surface emitting lasers; 665 nm; AlGaInP; AlGaInP MQW DBR VCSELs; free carrier absorption; loss mechanism; red VCSELs; slope efficiency; threshold current density data; Absorption; Mirrors; Optical losses; Optical scattering; Pulse measurements; Resonance; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811973
