Title :
An ultra low-voltage, ultra low-power CMOS mixer using the body effect
Author :
Zoka, Negar ; Kargaran, E. ; Nabovati, Ghazal ; Nabovati, H.
Author_Institution :
Electr. Eng. Dept., Sadjad Inst. of Higher Educ., Mashhad, Iran
Abstract :
A fully differential ultra low-voltage, ultra low-power down-conversion mixer is presented in this paper. The mixer is designed using four-terminal MOS transistors. The radio-frequency (RF) and local-oscillator signals are applied to the gate and bulk of the devices, respectively. The proposed circuit is designed and simulated in the TSMC 0.18_μm CMOS process, with a 1.9GHz RF signal; the simulation results show that the proposed mixer has a conversion gain of 8dB, IIP3 of -10.6dBm and SSB noise figure of 12.7dB. The total power consumption in the 0.5 V supply voltage is 1.32mW.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; mixers (circuits); RF signal; body effect; down-conversion mixer; four-terminal MOS transistors; frequency 1.9 GHz; gain 8 dB; local-oscillator signals; noise figure 12.7 dB; power 1.32 mW; radio-frequency signals; size 0.18 mum; ultra low-power CMOS mixer; voltage 0.5 V; Mixers; Radio frequency; Topology;
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2011.6026543
