• DocumentCode
    340709
  • Title

    Temperature effects on CdZnTe detector performance

  • Author

    Murray, W. ; Krueger, K. ; Rawool-Sullivan, M.W. ; Ussery, L. ; Whitley, C.

  • Author_Institution
    Los Alamos Nat. Lab., NM, USA
  • Volume
    1
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    643
  • Abstract
    CdZnTe detectors are potential replacements for traditional room temperature detectors such as NaI in many applications. One particularly suitable application could be their use in portable field instruments for isotopic identification. To fully exploit them for this purpose, however, their behavior in conditions likely to be encountered in the field must be fully characterized and understood. At Los Alamos National Laboratory, we are studying one of these conditions, the effect of temperature extremes, on CdZnTe detectors. In the case of a 1×1×1 cm3 detector with a coplanar anode structure, we have found temporary degraded performance at elevated temperatures near 50°C and a failure mode at temperatures below -20°C. This paper discusses the performance of two CdZnTe crystals when exposed to temperature extremes
  • Keywords
    semiconductor counters; 253 to 323 K; CdZnTe; CdZnTe detector; coplanar anode; performance; temperature; Anodes; Cathodes; Crystals; Degradation; Gamma ray detectors; Laboratories; Packaging; Preamplifiers; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5021-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1998.775221
  • Filename
    775221