Title :
Polarization independent δ-strained InGaAs/InGaAsP quantum well waveguide modulator
Author :
Zhu, Y. ; Saini, S. ; Bartolo, R. ; Ren, T. ; Dagenais, M. ; Johnson, F. ; Shen, H. ; Pamulapati, J. ; Zhou, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Polarization independent modulators are important devices for optical communication systems operating at 1.55 μm. However, conventional unstrained QW modulators, based on the quantum confined Stark effect (QCSE), typically exhibit a strong polarization dependence in transmission due to a strong polarization dependence of the absorption near the band edge. We have demonstrated a δ-strained InGaAs/InGaAsP MQW polarization independent waveguide modulator. It exhibits excellent polarization insensitivity, high extinction ratio, high speed response and low driving voltage. It shows that the δ-strained MQW modulator is a promising device for telecommunication applications
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical fabrication; optical waveguide components; quantum confined Stark effect; quantum well devices; ridge waveguides; semiconductor heterojunctions; semiconductor quantum wells; δ-strained InGaAs/InGaAsP MQW polarization independent waveguide modulator; δ-strained MQW modulator; 1.55 mum; InGaAs-InGaAsP; InGaAs/InGaAsP; absorption; band edge; conventional unstrained QW modulators; extinction ratio; high speed response; low driving voltage; optical communication systems; polarization dependence; polarization independent δ-strained modulators; polarization independent modulators; polarization insensitivity; quantum confined Stark effect; quantum well waveguide modulator; telecommunication applications; transmission; Absorption; Delta modulation; Extinction ratio; Indium gallium arsenide; Optical fiber communication; Optical polarization; Optical waveguides; Potential well; Quantum well devices; Stark effect;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811999
