Title :
Evanescently-coupled, waveguide-fed photodiodes for ultrawide-band applications
Author :
Giraudet, L. ; Demiguel, S. ; Banfi, F.
Author_Institution :
OPTO+, Marcoussis, France
Abstract :
Low polarisation dependence, 60 GHz and 100 GHz AlGaInAs waveguide fed photodiodes have been simulated at 1.55 μm wavelength. They exhibit internal quantum efficiencies as high as 94% and 75% for 60 GHz and 100 GHz bandwidths respectively. Electrical analysis predicts better performances for AlGaInAs based photodiodes. Waveguide-fed photodiodes are shown to be very good candidates for high bandwidth applications
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; light polarisation; p-i-n photodiodes; 1.55 mum; 100 GHz; 60 GHz; 75 percent; 94 percent; AlGaInAs; AlGaInAs waveguide fed photodiodes; electrical analysis; evanescently-coupled waveguide-fed photodiodes; high bandwidth applications; internal quantum efficiencies; low polarisation dependence; pin photodiodes; ultrawide-band applications; Bandwidth; Lighting; Optical materials; Optical refraction; Optical variables control; Optical waveguides; P-i-n diodes; PIN photodiodes; Polarization; Refractive index;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.812009
