Evanescently-coupled, waveguide-fed photodiodes for ultrawide-band applications

Author

Giraudet, L. ; Demiguel, S. ; Banfi, F.

Author_Institution

OPTO+, Marcoussis, France

Volume

2

fYear

1999

fDate

1999

Firstpage

866

Abstract

Low polarisation dependence, 60 GHz and 100 GHz AlGaInAs waveguide fed photodiodes have been simulated at 1.55 μm wavelength. They exhibit internal quantum efficiencies as high as 94% and 75% for 60 GHz and 100 GHz bandwidths respectively. Electrical analysis predicts better performances for AlGaInAs based photodiodes. Waveguide-fed photodiodes are shown to be very good candidates for high bandwidth applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; light polarisation; p-i-n photodiodes; 1.55 mum; 100 GHz; 60 GHz; 75 percent; 94 percent; AlGaInAs; AlGaInAs waveguide fed photodiodes; electrical analysis; evanescently-coupled waveguide-fed photodiodes; high bandwidth applications; internal quantum efficiencies; low polarisation dependence; pin photodiodes; ultrawide-band applications; Bandwidth; Lighting; Optical materials; Optical refraction; Optical variables control; Optical waveguides; P-i-n diodes; PIN photodiodes; Polarization; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.812009

Filename

812009