Title :
Bias dependent performance of 1.55 μm absorption high-speed n-i-n photodetectors using low-temperature grown GaAs
Author :
Chiu, Yi-Jen ; Zhang, Sheng Z. ; Kaman, Volkan ; Ibbetson, James P. ; Bowers, John E. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We have successfully fabricated a novel n-i-n photodetector operating at 1.55 μm on GaAs. The characteristics at high-speed (above 20 GHz) and the high efficiency at high bias show that this kind of photodetector has potential application in the fields of long-wavelength optical-fiber communication and for integration with GaAs integrated circuits
Keywords :
III-V semiconductors; absorption coefficients; frequency response; gallium arsenide; high-speed optical techniques; p-i-n photodiodes; photodetectors; 1.55 mum; GaAs; GaAs high-speed n-i-n photodetectors; GaAs integrated circuits; bias dependent performance; high efficiency; high-speed characteristics; long-wavelength optical-fiber communication; low-temperature grown GaAs; Absorption; Frequency response; Gallium arsenide; High speed optical techniques; Optical devices; Optical waveguides; PIN photodiodes; Photoconductivity; Photodetectors; Voltage;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.812010
