Device-modeling and circuit-design techniques for CMOS transceivers in THz region

Device-modeling and circuit-design techniques for CMOS transceivers operating in the THz region are introduced. For accurate circuit design, a bond-based design that can be used for high-frequency circuit design is proposed, and device models that can be used for the bond-based design are introduced. A 120 GHz transmitter and receiver are developed using 65 nm CMOS technology. The current consumption of the transmitter and receiver is 19.2 mA and 48.2 mA respectively. A 9 Gbps PRBS (Pseudorandom Binary Sequence) is successfully transferred from the transmitter to the receiver with a BER (Bit Error Rate) of less than 10-9. These results indicate the feasibility of the low-power CMOS transceiver in the THz region.