Reduction of point defects in PMOS source/drain formation

In deep sub-quarter micron surface channel pMOS fabrication, this paper investigates the effects of point defects induced by implantation for source/drain formation, and proposes a junction formation process for minimizing transient enhanced diffusion. For fabricating shallow SD-extension, sub-keV single B implantation without amorphization process reduced TED. For deep-SD implantation with relatively high energy condition, Ge pre-amorphization process reduced TED. These optimized conditions minimized the TED effects on SD and channel regions