Title :
A simplified and approximate power MOSFET intrinsic capacitance simulation: Theoretical studies, measures and comparisons
Author :
Consentino, Giuseppe ; Ardita, Giovanni
Author_Institution :
Senior Applic. Lab. Eng for Modeling, STMicroelectron., Catania
fDate :
June 30 2008-July 2 2008
Abstract :
This paper implements a theoretical study on power MOSFETs internal capacitances. To simulate these capacitances the paper takes into consideration the internal structures of the power MOSFETs, materials and process characteristics. Finally, real measures are implemented on a power MOSFET device by ST and are compared to the simulated data to validate the model.
Keywords :
capacitance; power MOSFET; power MOSFET device; power MOSFET internal capacitances; power MOSFET internal structures; power MOSFET intrinsic capacitance simulation; Capacitance measurement; Dielectrics; MOS capacitors; MOSFET circuits; Power MOSFET; Power measurement; Silicon; Strips; Topology; Voltage;
Conference_Titel :
Industrial Electronics, 2008. ISIE 2008. IEEE International Symposium on
Conference_Location :
Cambridge
Print_ISBN :
978-1-4244-1665-3
Electronic_ISBN :
978-1-4244-1666-0
DOI :
10.1109/ISIE.2008.4676904
