DocumentCode
3408050
Title
A simplified and approximate power MOSFET intrinsic capacitance simulation: Theoretical studies, measures and comparisons
Author
Consentino, Giuseppe ; Ardita, Giovanni
Author_Institution
Senior Applic. Lab. Eng for Modeling, STMicroelectron., Catania
fYear
2008
fDate
June 30 2008-July 2 2008
Firstpage
38
Lastpage
43
Abstract
This paper implements a theoretical study on power MOSFETs internal capacitances. To simulate these capacitances the paper takes into consideration the internal structures of the power MOSFETs, materials and process characteristics. Finally, real measures are implemented on a power MOSFET device by ST and are compared to the simulated data to validate the model.
Keywords
capacitance; power MOSFET; power MOSFET device; power MOSFET internal capacitances; power MOSFET internal structures; power MOSFET intrinsic capacitance simulation; Capacitance measurement; Dielectrics; MOS capacitors; MOSFET circuits; Power MOSFET; Power measurement; Silicon; Strips; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2008. ISIE 2008. IEEE International Symposium on
Conference_Location
Cambridge
Print_ISBN
978-1-4244-1665-3
Electronic_ISBN
978-1-4244-1666-0
Type
conf
DOI
10.1109/ISIE.2008.4676904
Filename
4676904
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