A broadband medium power amplifier for millimeter-wave applications

Author

Chuang, Mei-Chen ; Lei, Ming-Fong ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., National Taiwan Univ., Taipei, Taiwan

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A power amplifier using 0.15-μm GaAs pHEMT technology is presented. This amplifier combines two conventional distributed amplifiers to achieve wide bandwidth, high gain and moderate output power. The measured small signal gain is 15.3 ± 1 dB from 4 to 37 GHz with a chip size of 2 × 1.5 mm². The output saturated power is 20.6-23.3 dBm from 4 to 37 GHz. The wide bandwidth and large output power makes it useful in many microwave and millimeter wave applications, such as broadband amplifiers in microwave equipment, and ultra-wide-band signal amplification.

Keywords

III-V semiconductors; MMIC; distributed amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave power amplifiers; wideband amplifiers; 0.15 micron; 4 to 37 GHz; GaAs; GaAs pHEMT technology; MMIC; broadband medium power amplifier; distributed amplifiers; millimeter-wave power amplifier; monolithic integrated circuit; output saturated power; signal gain; Bandwidth; Broadband amplifiers; Distributed amplifiers; Gallium arsenide; Microwave devices; Millimeter wave measurements; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation; broadband; monolithic integrated circuit (MMIC); power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606595

Filename

1606595