Formation of shallow P-type layers by dual-implantation of boron and hydrogen ions

Various combinations of B⁺, H⁺, and H₂ ⁺ ions were implanted into Czochralski-grown 20 Ω-cm, phosphorus-doped, (100) silicon wafers at energies such that their respective projected ranges differ. The implanted silicon was annealed in Ar gas at 1000°C for 30 min. The B and H atom distributions on the annealed samples were independent of the dose and energy of hydrogen ions. The carrier distributions, however, depended strongly on the dose and energy of hydrogen ions: they became shallower with increasing dose of hydrogen ions; when hydrogen ions were implanted at energies such that the projected range was smaller than that of B ions, the carrier distributions were strongly dependent on the dose of hydrogen ions, rather than that in silicon when hydrogen ions were implanted at the projected range smaller than B ions